PART |
Description |
Maker |
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
BF1102 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF994S BF994 |
N-channel dual-gate MOS-FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BF904A BF904AR BF904AWR |
N-channel dual gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
3SK322 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
BF1105WR BF1105 BF1105R |
CONNECTOR N-channel dual-gate MOS-FETs
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
3SK321 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
3SK297ZP-TL-E 3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
BF966 |
N-Channel Dual Gate MOS Fieldeffect Tetrod
|
Telefunken
|